Product Summary

The IRF6603 is a HEXFET Power MOSFET, which combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of IRF6603 is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process.

Parametrics

IRF6603 absolute maximum ratings: (1)Drain-to-Source Voltage: 30 V; (2)Gate-to-Source Voltage: +20/-20 V; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 92 A; (4)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 27 A; (5)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 22 A; (6)Pulsed Drain Current: 200 A; (7)PD @TA = 25℃ Power Dissipation: 3.6 W; (8)PD @TA = 70℃ Power Dissipation: 2.3 W; (9)PD @TC = 25℃ Power Dissipation: 42 W; (10)Linear Derating Factor: 0.029 W/℃; (11)Operating Junction and Storage Temperature Range: -40 to +150 ℃.

Features

IRF6603 features: (1)Application Specific MOSFETs; (2)Ideal for CPU Core DC-DC Converters; (3)Low Conduction Losses; (4)High Cdv/dt Immunity; (5)Low Profile (<0.7 mm); (6)Dual Sided Cooling Compatible; (7)Compatible with existing Surface Mount Techniques.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF6603
IRF6603

International Rectifier

MOSFET

Data Sheet

0-3140: $1.11
3140-4800: $1.11
IRF6603TR1
IRF6603TR1

International Rectifier

MOSFET

Data Sheet

0-720: $1.02
720-1000: $1.02