Product Summary
The IRFB4115PBF is a HEXFET Power MOSFET. It is designed for High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFB4115PBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 104 A; (2)Continuous Drain Current, VGS @ 10V: 74 A; (3)Pulsed Drain Current: 420 A; (4)Maximum Power Dissipation: 380 W; (5)Linear Derating Factor: 2.5 W/℃; (6)Gate-to-Source Voltage: 20 V; (7)Peak Diode Recovery: 18 V/ns; (8)Operating Junction and Storage Temperature Range: -55 to +175 ℃; (9)Soldering Temperature, for 10 seconds (1.6mm from case): 300 ℃; (10)Mounting torque, 6-32 or M3 screw: 10lb·in.
Features
IRFB4115PBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFB4115PBF |
International Rectifier |
MOSFET MOSFT 150V 104A 11mOhm 77nC Qg |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFB11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
|
|
|||||||||||||
IRFB11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
|
|
|||||||||||||
IRFB13N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
|
|
|||||||||||||
IRFB13N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
|
|
|||||||||||||
IRFB16N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
|
|||||||||||||
IRFB16N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
|