(China (Mainland))
Product Summary
The 3 Volt Advanced Boot Block flash memory, manufactured on Intel latest 0.18 mm technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family will only be available in 40-lead TSOP and 48-ball BGA packages.
Parametrics
Absolute maximum ratings:(1)During Read: -40℃ to +85℃; (2)During Block Erase and Program: -40℃ to +85℃; (3)Temperature under Bias: -40℃ to +85℃; (4)Storage Temperature: -65℃ to +125℃; (5)Voltage On Any Pin (except VCC, VCCQ and VPP) with Respect to GND: -0.5V to +3.7V; (6)VPP Voltage (for Block Erase and Program) with Respect to GND: -0.5V to +13.5V; (7)VCC and VCCQ Supply Voltage with Respect to GND: -0.2V to +3.7V; (8)Output Short Circuit Current: 100mA.
Features
Features:(1)6 V Read/Program/Erase; (2)2 V VPP Fast Production Programming; (3)2.7 V or 1.65 V I/O Option; (4)High Performance; (5)70 ns Max Access Time; (6)Optimized Block Sizes; (7)light 8-KB Blocks for Data,Top or Bottom Locations; (8)Block Locking; (9)CC-Level Control through WP; (10)Low Power Consumption; (11)Power Savings; (12)4-Mbit density not recommended for new designs.
Diagrams
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 TE28F004S3-150 |
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Negotiable |
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TE28F004S5-100 |
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Negotiable |
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TE28F004SC-100 |
Other |
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Negotiable |
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TE28F008B3B120 |
Other |
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Negotiable |
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TE28F008B3BA110 |
Other |
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Negotiable |
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TE28F008SA-100 |
Other |
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Data Sheet |
Negotiable |
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