Product Summary

The ATF45101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. The ATF45101 is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.

Parametrics

ATF45101 absolute maximum ratings: (1)VDS, Drain-Source Voltage: +14V; (2)VGS, Gate-Source Voltage: -7V; (3)VGD, Gate-Drain Voltage: -16V; (4)IDS, Drain Current: IDSSmA; (5)PT, Power Dissipation: 3.6W; (6)TCH, Channel Temperature: 175℃; (7)Tstg, Storage Temperature: -65 to +175℃.

Features

ATF45101 features: (1)High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz; (2)High Gain at 1dB Compression: 10.0 dB Typical G 1 dB at 4 GHz; (3)High Power Efficiency: 38% Typical at 4 GHz; (4)Hermetic Metal-Ceramic Stripline Package.

Diagrams

ATF45101 dimensions

ATF4
ATF4


TERM BLOCK DIN RAIL 8MM GRAY

Data Sheet

0-100: $4.84
ATF415
ATF415

Other


Data Sheet

Negotiable 
ATF416
ATF416

Other


Data Sheet

Negotiable 
ATF4BK
ATF4BK


TERM BLOCK DIN RAIL 8MM BLACK

Data Sheet

0-100: $4.84
ATF4BU
ATF4BU


TERM BLOCK DIN RAIL 8MM BLUE

Data Sheet

0-100: $4.84
ATF4MT1
ATF4MT1


MARKING TAG DIN RAIL 8MM BLOCK

Data Sheet

0-100: $0.45