(China (Mainland))
Product Summary
The ATF45101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. The ATF45101 is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.
Parametrics
ATF45101 absolute maximum ratings: (1)VDS, Drain-Source Voltage: +14V; (2)VGS, Gate-Source Voltage: -7V; (3)VGD, Gate-Drain Voltage: -16V; (4)IDS, Drain Current: IDSSmA; (5)PT, Power Dissipation: 3.6W; (6)TCH, Channel Temperature: 175℃; (7)Tstg, Storage Temperature: -65 to +175℃.
Features
ATF45101 features: (1)High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz; (2)High Gain at 1dB Compression: 10.0 dB Typical G 1 dB at 4 GHz; (3)High Power Efficiency: 38% Typical at 4 GHz; (4)Hermetic Metal-Ceramic Stripline Package.
Diagrams
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TERM BLOCK DIN RAIL 8MM GRAY |
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