IRF7319TRPBF

HEXFET, SOP, 30V

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.60 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.30~0.60

PartNumber:: IRF7319TRPBF

Brand:: International Rectifier - IR | Pack: SOP | D/C: 04+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. Ken's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-02-20

From Other Seller

Part Number:IRF7319TRPBF
US $0.30 - 0.60
FM31256-G

US $2.40 - 4.20 / Piece
(0) Remove
LM285M-2.5

US $0.16 - 0.25 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRF7319TRPBF is a fifth generation HEXFET. The IRF7319TRPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device designed that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7319TRPBF absolute maximum ratings: (1)drain-source voltage, VDS: 30V N-channel, -30V P-channel; (2)gate-source voltage, VGS: ±20V; (3)continuous drain current, ID: 6.5A N-channel, -4.9A P-channel when TA=25℃; 5.2A N-channel, -3.9A P-channel when TA=70℃; (4)pulsed drain current, IDM: 3.0A N-channel, -3.0A P-channel; (5)continuous source current (Diode Conduction), Is: 2.5A N-channel, -2.5A P-channel; (6)maximum power dissipation, PD: 2.0W when TA=25℃; 1.3W when TA=70℃; (7)single pulse avananche energy, EAS: 82mJ N-channel, 140mJ P-channel; (8)avalanche current, IAR: 4.0A N-channel, -2.8A P-channel; (9)repetitive avalanche energy, EAR: 0.20mJ; (10)peak diode recovery dv/dt, dv/dt: 5.0V/ns N-channel, -5.0V/ns P-channel; (11)junction and storage temperature range, TJ, TSTG: -55 to +150℃.

Features

IRF7319TRPBF features: (1)generation V technology; (2)ultra low on-resistance; (3)dual N and P channel MOSFET; (4)surface mount; (5)fully avalache rated; (6)lead-free.