(China (Mainland))
Product Summary
The Avago ATF-36163-TR1G is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12 GHz and 0.6 dB at 4 GHz. The applications of the ATF-36163-TR1G include 12 GHz DBS Downconverters, 4 GHz TVRO Downconverters, S or L Band Low Noise. Amplifiers
Parametrics
ATF-36163-TR1G absolute maximum ratings: (1)Drain - Source Voltage: +3 V; (2)Gate - Source Voltage: -3 V; (3)Gate Drain Voltage: -3.5 V; (4)Drain Current: Idss mA; (5)Total Power Dissipation: 180 mW; (6)max RF Input Power: +10 dBm; (7)Channel Temperature: 150 ℃; (8)Storage Temperature: -65 to 150 ℃.
Features
ATF-36163-TR1G features: (1)Lead-free Option Available; (2)Low Minimum Noise Figure: 1 dB Typical at 12 GHz, 0.6 dB Typical at 4 GHz; (3)Associated Gain: 9.4 dB Typical at 12 GHz, 15.8 dB Typical at 4 GHz; (4)Maximum Available Gain: 11 dB Typical at 12 GHz, 17 dB Typical at 4 GHz; (5)Low Cost Surface Mount Small Plastic Package; (6)Tape-and-Reel Packaging Option Available.
Diagrams
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 ATF-36163-TR1G |
Avago Technologies |
Transistors RF GaAs Transistor GaAs High Frequency |
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ATF-10100 |
Other |
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Negotiable |
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ATF-10136 |
Other |
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Negotiable |
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ATF-10170 |
Other |
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Negotiable |
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ATF-10236 |
Other |
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Data Sheet |
Negotiable |
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ATF-10736 |
Other |
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Negotiable |
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ATF-10XXX |
Other |
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Data Sheet |
Negotiable |
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