MT28F800B5WG-8B

FLASH MEMORY, 8 MBIT, TSOP48, Eight main memory blocks, 80ns Address access time

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.80~4.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.80~4.00

PartNumber:: MT28F800B5WG-8B

Brand:: Micron Technology - MT | Pack: TSOP | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. Ken's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-02-20

From Other Seller

Part Number:MT28F800B5WG-8B
US $1.80 - 4.00
EKZE250ELL152MK25S

US $0.10 - 1.00 / Piece
(0) Remove
TMS320C6414TBGLZA7

US $58.00 - 65.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The MT28F800B5WG-8B is a nonvolatile, electrically block-erasable (Flash), programmable read-only memory containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. The MT28F800B5WG-8B is fabricated with Micron advanced 0.18μm CMOS floating-gate process. The MT28F800B5WG-8B is organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the device features a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

Parametrics

MT28F800B5WG-8B absolute maximum ratings: (1)Voltage on VCC Supply Relative to VSS: -0.5V TO +6V; (2)Input Voltage Relative to VSS: -0.5V TO +6V; (3)VPP Voltage Relative TO VSS: -0.5V TO +5.5V; RP# or A9 Pin Voltage Relative to Vss: -0.5V to +12.6; (4)Temperature Under Bias: -40℃ to +85℃; (5)Storage Temperature (plastic): -55℃ to +125℃; (6)Power Dissipation: 1W.

Features

MT28F800B5WG-8B features: (1)Eleven erase blocks: 16KB/8K-word boot block (protected); Two 8KB/4K-word parameter blocks; (2)Eight main memory blocks; (3)Smart 5 technology (B5): 5V ±10% VCC; (4)5V ±10% VPP application/production programming; (5)Advanced 0.18μm CMOS floating-gate process; (6)Compatible with 0.3μm Smart 5 device; (7)Address access time: 80ns; (8)100,000 ERASE cycles; (9)Industry-standard pinouts; (10)Automated write and erase algorithm; (11)Two-cycle WRITE/ERASE sequence; (12)TSOP and SOP packaging options; (13)Byte- or word-wide READ and WRITE (MT28F800B5, 1 Meg x 8/512K x 16).