Product Summary
The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. The MT48LC16M16A2P is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4s 67,108,864-bit banks is organized as 8192 rows by 2048 columns by 4 bits. Each of the x8s 67,108,864-bit banks is organized as 8192 rows by 1024 columns by 8 bits. Each of the x16s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16 bits. Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA[1:0] select the bank; A[12:0] select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.
Parametrics
Absolute maximum ratings:(1)Voltage on VDD/VDDQ supply relative to VSS, VDD/VDDQ: –1 to +4.6V; (2)Voltage on inputs, NC, or I/O balls relative to VSS, VIN: –1 to +4.6V; (3)Storage temperature (plastic), TSTG: –55 to +150℃; (4)Power dissipation: 1W.
Features
Features:(1)PC100- and PC133-compliant; (2)Fully synchronous; all signals registered on positive edge of system clock; (3)Internal, pipelined operation; column address can be changed every clock cycle; (4)Internal banks for hiding row access/precharge; (5)Programmable burst lengths: 1, 2, 4, 8, or full page; (6)Auto precharge, includes concurrent auto precharge and auto refresh modes; (7)Self refresh mode (not available on AT devices); (8)Auto refresh: 64ms, 8192-cycle (commercial and industrial), 16ms, 8192-cycle (automotive); (9)LVTTL-compatible inputs and outputs; (10)Single +3.3V ±0.3V power supply.
Diagrams
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MT48LC16M16A2P-6A:D |
IC SDRAM 256MBIT 167MHZ 54TSOP |
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MT48LC16M16A2P-6A:D TR |
IC SDRAM 256MBIT 167MHZ 54TSOP |
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MT48LC16M16A2P-75 L:D |
IC SDRAM 256MBIT 133MHZ 54TSOP |
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MT48LC16M16A2P-75 IT:D TR |
IC SDRAM 256MBIT 133MHZ 54TSOP |
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MT48LC16M16A2P-75 IT:D |
IC SDRAM 256MBIT 133MHZ 54TSOPII |
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MT48LC16M16A2P-75 |
Other |
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Negotiable |
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MT48LC16M16A2P-75 L:D TR |
IC SDRAM 256MBIT 133MHZ 54TSOP |
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MT48LC16M16A2P-75:D TR |
IC SDRAM 256MBIT 133MHZ 54TSOP |
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