Product Summary

The D43256C-12L is a high speed, low power, 92k words by 8bite CMOS static RAM. It is fabricated with advanced silicon-gate CMOS technology. The D43256C-12L is a low standby power device using n-channel memory cell with polysilicon resistors. The device is extended-temperature-version. It is packaed in 28-pin DIP and 28-pin SOP. Furthermore, a novel circuitry technique makes the D43256C-12L a high speed and low operating power device which requires no clock or refreshing to operate.

Parametrics

D43256C-12L absolute maximum ratings: (1)supply voltage:-0.5V to +7.0V; (2)input/output voltage:-0.5V to VCC+0.5V; (3)operating temperature:-40℃ to +85℃; (4)storage temperature:-55℃ to +125℃.

Features

D43256C-12L features: (1)32786 words by 8 bits organization; (2)fast access time:10/10L: 100ns max. 12/12L:120ns max. 15/15L:150ns max.; (3)low power dissipation: standby supply current:200μA max., data retention supply current:18μA max.; (4)extended temperature range:Ta=-40℃ to 85℃; (5)single +5V supply; (6)fully static operation:no clock or refreshing required; (7)TTL compatible: ALL inputs and outputs; (8)common I/O using three-state output; (9)on chip select and one output enable inputs for application.

Diagrams