(China (Mainland))
Product Summary
The M5M5V108DKV-70H is a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. The M5M5V108DKV-70H is low standby current and low operation current and ideal for the battery back-up application. The M5M5V108DKV-70H is packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).
Parametrics
M5M5V108DKV-70H absolute maximum ratings: (1)VCC, Supply voltage: -0.3~4.6V with respect to GND; (2)Vi, Input voltage: -0.3~VCC+0.3 (max 4.6) V with respect to GND; (3)VO, Output voltage: 0~VCC V with respect to GND; (4)Pd, Power dissipation: 700mW; (5)Topr, Operating temperature: 0~70℃; (6)Tstg, Storage temperature: -65~150℃.
Features
M5M5V108DKV-70H features: (1)Directly TTL compatible: All inputs and outputs; (2)Easy memory expansion and power down by S1,S2; (3)Data hold on +2V power supply; (4)Three-state outputs: OR - tie capability; (5)OE prevents data contention in the I/O bus; (6)Common data I/O; (7)package: 32pin 8 X 13.4 mm TSOP.
Diagrams
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 M5M5V108DKV-70H |
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Negotiable |
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