NAND02GW3B2DN6E

flash memory, TSOP, 2 Gbits

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Price:: US $3.00~6.00 / piece [Get Latest Price]

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PartNumber:: NAND02GW3B2DN6E

Brand:: Numonyx B.V - Numonyx | Pack: TSOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-02-21

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Product Summary

The NAND02GW3B2DN6E is a NAND flash 2112-byte/1056-word page non-volatile flash memory. It uses NAND cell technology and has a density of 2 Gbits. The NAND02GW3B2DN6E has a memory array that is split into 2 planes of 1024 blocks each. This multiplane architecture makes it possible to program 2 pages at a time (one in each plane), or to erase 2 blocks at a time (one in each plane). This feature reduces the average program and erase times by 50%.

Parametrics

NAND02GW3B2DN6E absolute maximum ratings: (1)Temperature under bias: – 50 to 125 ℃; (2)Storage temperature: – 65 to 150 ℃; (3)Input or output voltage: – 0.6 to 4.6 V; (4)Supply voltage: – 0.6 to 4.6 V.

Features

NAND02GW3B2DN6E features: (1)High density NAND flash memory: Up to 2 Gbits of memory array, Cost-effective solution for mass storage applications; (2)NAND interface: x8 or x16 bus width, Multiplexed address/data; (3)Supply voltage: 1.8 V or 3.0 V device; (4)Page size: x8 device: (2048 + 64 spare) bytes, x16 device: (1024 + 32 spare) words; (5)Block size: x8 device: (128 K + 4 K spare) bytes, x16 device: (64 K + 2 K spare) words; (6)Multiplane architecture: Array split into two independent planes, Program/erase operations can be performed on both planes at the same time; (7)Page read/program: Random access: 25 μs (max), Sequential access: 25 ns (min), Page program time: 200 μs (typ), Multiplane page program time (2 pages): 200 μs (typ); (8)Copy back program with automatic EDC (error detection code).